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Twistable nonvolatile organic resistive memory devices |
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| Authors: | Sunghoon Song Jingon Jang Yongsung Ji Sungjun Park Tae-Wook Kim Younggul Song Myung-Han Yoon Heung Cho Ko Gun-Young Jung Takhee Lee |
| Affiliation: | 1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 1 Oryong-Dong, Buk-Gu, Gwangju 500-712, Republic of Korea;2. Department of Physics and Astronomy, Seoul National University, Gwanak-ro, Gwanak-gu, Seoul 151-747, Republic of Korea;3. Soft Innovative Materials Research Center, Korea Institute of Science and Technology, 864-9 Eunha-ri, Bongdong-eup, Wanju-gun, Jeollabukdo 565-905, Republic of Korea |
| Abstract: | We fabricated an 8 × 8 cross-bar array-type organic nonvolatile memory devices on twistable poly(ethylene terephthalate) (PET) substrate. A composite of polyimide (PI) and 6-phenyl-C61 butyric acid methyl ester (PCBM) was used as the active material for the memory devices. The organic memory devices showed a high ON/OFF current ratio, reproducibility with good endurance cycle, and stability with long retention time over 5 × 104 s on the flat substrate. The device performance remained well under the twisted condition with a twist angle up to ～30°. The twistable organic memory device has a potential to be utilized in more complex flexible organic device configurations. |
| Keywords: | Organic memory Twistable Nonvolatile Resistive memory |
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