Experimental determination of carrier-induced differential loss in 2-section GaInAsP/InP laser-waveguide |
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| Authors: | Brosson P. Labourie C. Le Gouezigou L. Lievin J.L. Jacquet J. Leblond F. Olivier A. Leclerc D. |
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| Affiliation: | Lab. de Marcoussis, France; |
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| Abstract: | Measurements of threshold current density and external efficiency on broad-area laser-waveguide structure have led to the determination of the optical loss and differential loss d alpha /dN approximately=1.1-2.3 *10/sup -17/ cm/sup 2/ at lambda =1.53 mu m in a lambda /sub g/=1.30 mu m GaInAsP layer. This measurement will be useful for the design of tunable lasers.<> |
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