Influence of substrate temperature to prepare (1 0 3) oriented AlN films |
| |
| Authors: | Maw-Shung Lee Sean Wu Shih-Bin Jhong Kuan-Ting Liu Ruyen Ro Chia-Chi Shih Zhi-Xun Lin Kang-I Chen Shou-Chang Cheng |
| |
| Affiliation: | a Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, 415 Chien Kung Road, Kaohsiung 807, Taiwan;b Department of Electronics Engineering and Computer Sciences, Tung-Fang Institute of Technology, 110 Tung-Fung Road, Hunei Shiang, Kaohsiung 829, Taiwan;c Department of Electronic Engineering, Cheng Shiu University, No. 840 Sheng Ching Road, Kaohsiung 833, Taiwan;d Department of Electrical Engineering, I-Shou University, 1, Section 1, Hsueh-Cheng Rd., Ta-Hsu Hsiang, Kaohsiung County 840, Taiwan |
| |
| Abstract: | (1 0 3) Oriented AlN films is an attractive piezoelectric material for the applications on surface acoustic wave (SAW) and film bulk acoustic wave (FBAR) devices. As regards the SAW properties of the (1 0 3) oriented AlN films, the electromechanical coupling constant (K2) is larger than the (0 0 2) oriented AlN films. As regards the bulk acoustic wave (BAW) properties of (1 0 3) oriented AlN films, it can excite a quasi-shear mode (velocity = 5957 m/s, K2 = 3.8%) that can be used for FBAR liquid sensor. In this research, the (1 0 3) oriented AlN films were successfully prepared on the silicon substrate by rf magnetron sputtering. Different temperatures (100 °C, 200 °C, 300 °C, and 400 °C) were used in this experiment process. The crystalline structure of films was determined by X-ray diffraction (XRD) and the surface microstructure was investigated by the atomic force microscope (AFM). The result exhibited the optimal substrate temperature is 300 °C. The optimal (1 0 3) oriented AlN films have the strongest XRD intensity, the smallest full width at half maximum (FWHM) value (0.6°), the largest grain size (15.8 nm) and the smoothest surface (Ra = 3.259 nm). |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
