基于非对称掺杂策略的GNRFET电学特性研究

基于量子力学非平衡Green函数理论框架,在开放边界条件下,通过自洽求解三维Poisson和Schrodinger方程,构建了适用于非均匀掺杂的石墨烯场效应管的输运模型.并利用该模型分析计算采用非对称HALO-LDD掺杂策略的石墨烯纳米条带场效应管（GNRFET）的电学特性.通过与采用其他掺杂策略的GNRFET的输出特性、转移特性、开关电流比、亚阈值摆幅、阈值电压漂移等电学特性对比分析,发现这种掺杂结构的石墨烯场效应管具有更大的开关电流比、更低的泄漏电流、更小的亚阈值摆幅和阈值电压漂移,表明采用非对称HALO-LDD掺杂策略的GNRFET具有更好的栅控能力,能够有效的抑制短沟道效应和热载流子效应.

Theoretical Study of Electrical Characteristics of GNRFETs Based on Asymmetric Hald-ldd Doping Strategy

In this paper,a transport model suitable for non-uniform doped GNRFET is built by self-consistently solving the 3D Poisson and-Schr？ dinger equations in terms of the open boundaries with the NonEquilibrium Green＇s function formulation.The influence of single HALO and LDD doping structures on the GNRFET is investigated based on the proposed model.Comparisons are made with other GNRFET doping schemes in terms of the electrical features,such as the output properties,the transfer features,the on-off current ratio,sub-threshold swing and the threshold voltage shift.Simulation results show that HALO-LDD-GNRFET can achieve the highest on-off current ratio,the smalless sub-threshold swing and the threshold voltage shift.Besides that,it shows that the GNRFET with asymmetric HALO-LDD doping strategy GNRFET has better gate control ability than the conventional GNRFET,which can suppress the short channel effect and the hot electron effect efficiently.