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高速数字化三维集成式CCD-CMOS图像传感器
引用本文:李明,黄芳,刘戈扬,周后荣,王小东,任思伟. 高速数字化三维集成式CCD-CMOS图像传感器[J]. 半导体光电, 2024, 45(3): 388-394
作者姓名:李明  黄芳  刘戈扬  周后荣  王小东  任思伟
作者单位:重庆光电技术研究所, 重庆 400060
基金项目:工信部高质量发展项目(TC220H05N).*通信作者:李明
摘    要:为了解决CCD与CMOS工艺兼容性低、互连集成制作难度大,以及芯片间接口匹配和高性能兼备等问题,对CCD器件拓扑结构与像元、CMOS读出电路、三维异质互连集成及高密度引脚封装等技术进行研究,提出了一种1024×256阵列规模的集成式CCD-CMOS图像传感器。该器件实现了CCD信号的高精度数字化处理、高速输出及多芯粒的技术融合,填补了国内CCD-CMOS三维集成技术空白。测试结果表明:集成CCD-CMOS器件的光响应和成像功能正常,双边成像效果良好,图像无黑条和坏列,互连连通率(99.9%)满足三维集成要求,实现了集成式探测器件的大满阱高灵敏度成像(满阱电子数达165.28ke-、峰值量子效率达86.1%)、高精度数字化(12bit)和高速输出(行频率达100.85kHz),满足集成化、数字化、小型化的多光谱探测成像系统要求。

关 键 词:集成式CCD-CMOS探测器   三维互连集成   电荷耦合器件   CMOS读出电路
收稿时间:2024-04-20

A High-Speed, Digitized, 3D-Integrated CCD-CMOS Image Sensor
LI Ming,HUANG Fang,LIU Geyang,ZHOU Hourong,WANG Xiaodong,REN Siwei. A High-Speed, Digitized, 3D-Integrated CCD-CMOS Image Sensor[J]. Semiconductor Optoelectronics, 2024, 45(3): 388-394
Authors:LI Ming  HUANG Fang  LIU Geyang  ZHOU Hourong  WANG Xiaodong  REN Siwei
Affiliation:Chongqing Optoelectronics Research Institute, Chongqing 400060, CHN
Abstract:An integrated CCD-CMOS image sensor with an array size of 1024×256 is proposed in this paper to meet the need for high-precision digitization and high-speed output of CCD image sensor signals. Technologies related to CCD pixel device structure, CMOS readout circuit, 3D integration with heterogeneous interconnection, and high-density pin packaging were developed to address issues such as low compatibility between CCD and CMOS processes, the complexity of integration by interconnection, thereby achieving both adequate matching and high performance at connection ports between circuit dies. This new image sensor realizes the combination of high-precision CCD signal digitization, high-speed output, and multiple dies integration, filling the domestic gap in CCD-CMOS 3D integration technology. Test results show that the CCD-CMOS device has a normal photoresponse and imaging ability, achieving good imaging results from both array sides without any dark or broken columns. The connectivity rate of interconnection reaches 99.9%, meeting the needs of 3D integration. As an integrated detector device, it offers large full well capacity and high sensitivity imaging (FWC e- count reaching 165.28ke-, peak QE reaching 86.1%), high-precision digitization (12bit), and high-speed output (row readout frequency reaching 100.85kHz), thus meeting the requirements of integrated, digitized, miniaturized multispectral detecting and imaging systems.
Keywords:integrated CCD-CMOS detector   3D interconnection integration   charge-coupled device   CMOS readout circuit
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