| 具有积累层沟道的槽栅IGBT结构 |
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| 引用本文： | 钱梦亮,李泽宏,张波,李肇基. 具有积累层沟道的槽栅IGBT结构[J]. 半导体学报, 2010, 31(3): 034002-4 |
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| 作者姓名： | 钱梦亮 李泽宏 张波 李肇基 |
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| 作者单位： | State;Laboratory;Electronic;Thin;Films;Integrated;Devices;University;Science;Technology; |
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| 摘 要： | 提出了一种具有积累层沟道的槽栅IGBT结构。仿真结果表明：在阻断电压为1200V，集电极电流密度为100 A/cm2，温度分别为300K和400K下的情况下，积累层沟道槽栅IGBT的正向压降分别为1.5V 和2V而常规槽栅IGBT分别为1.7V和2.4V。新结构比常规槽栅IGBT具有更低的开态压降和更大的正向安全工作区。文中同时分析了积累层沟道槽栅IGBT的阻断特性和关断特性。
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| 关 键 词： | 绝缘栅双极晶体管 沟槽结构 积累 IGBT 通道 电极电流密度 通态压降 ACT |
| 收稿时间： | 2009-08-02 |
Insulated gate bipolar transistor with trench gate structure of accumulation channel |
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| Qian Mengliang,Li Zehong,Zhang Bo and Li Zhaoji. Insulated gate bipolar transistor with trench gate structure of accumulation channel[J]. Chinese Journal of Semiconductors, 2010, 31(3): 034002-4 |
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| Authors: | Qian Mengliang Li Zehong Zhang Bo Li Zhaoji |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology, Chengdu 610054, China |
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| Abstract: | An accumulation channel trench gate insulated gate bipolar transistor (ACT-IGBT) is proposed. The simulation results show that for a blocking capability of 1200 V, the on-state voltage drops of ACT-IGBT are 1.5 and 2 V at a temperature of 300 and 400 K, respectively, at a collector current density of 100 A/cm2. In contrast, the on-state voltage drops of a conventional trench gate IGBT (CT-IGBT) are 1.7 and 2.4 V at a temperature of 300 and 400 K, respectively. Compared to the CT-IGBT, the ACT-IGBT has a lower on-state voltage drop and a larger forward bias safe operating area. Meanwhile, the forward blocking characteristics and turn-off performance of the ACT-IGBT are also analyzed. |
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| Keywords: | ACT-IGBT CT-IGBT on-state voltage drop forward blocking voltage FBSOA |
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