| SiO2/SiC界面陷阱电荷近似计算的局限 |
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| 引用本文： | 戴振清,杨克武,杨瑞霞.SiO2/SiC界面陷阱电荷近似计算的局限[J].半导体技术,2007,32(4):308-312. |
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| 作者姓名： | 戴振清 杨克武 杨瑞霞 |
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| 作者单位： | 河北工业大学,微电子研究所,天津,300130;中国电子科技集团,第十三研究所,石家庄,050051;中国电子科技集团,第十三研究所,石家庄,050051;河北工业大学,微电子研究所,天津,300130 |
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| 摘 要： | 从理论上分析了近似计算所引起的SiC基MOSFET两个重要参数阈值电压和沟道电流的误差.结果显示,在很多情况下近似计算都会带来很大的误差(＞5%),尤其对于沟道电流,在大部分情况下误差很大,只是在少数条件下误差较小(＜5%).因此,近似计算SiO2/SiC界面陷阱电荷不尽合理,应利用电子在界面态上的分布函数进行准确计算.
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| 关 键 词： | 碳化硅 界面陷阱电荷 近似计算 阈值电压 |
| 文章编号： | 1003-353(2007)04-308-05 |
| 修稿时间： | 2006-11-07 |
Limitation of Approximate Calculation of Interface-Trapped Charge at SiO2/SiC |
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| DAI Zhen-qing,YANG Ke-wu,YANG Rui-xia.Limitation of Approximate Calculation of Interface-Trapped Charge at SiO2/SiC[J].Semiconductor Technology,2007,32(4):308-312. |
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| Authors: | DAI Zhen-qing YANG Ke-wu YANG Rui-xia |
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| Affiliation: | 1. Hebei University of Technology, Tianjin 300130, China ;2. The 13^th Re.arch Irish, CETC, Shijiazhuang 050051. China |
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| Abstract: | Based on theoretical analysis,the errors of threshold voltage and drain current of SiC-based MOSFET coming from approximate calculation of interface-trapped charge were investigated.The results show that the errors are large (>5%) in many cases.Especially for drain current,it is large in most cases,and only in a few cases it is small(<5%).Therefore,it is not appropriate for the calculation of interface-trapped charge with approximate method.And the accurate method with distribution function for electrons bound to interface states should be used. |
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| Keywords: | SiC interface-trapped charge approximate calculation threshold voltage |
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