| 镍硅化物生成的TEM原位研究 |
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| 引用本文： | 高铭台. 镍硅化物生成的TEM原位研究[J]. 电子与信息学报, 1988, 10(4): 360-366. |
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| 作者姓名： | 高铭台 |
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| 作者单位： | 中国科学院电子学研究所 北京 |
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| 摘 要： | 蒸涂法获得的Si-Ni界面在室温到800℃下热处理,并用透射式电子显微镜对它进行原位研究。在化学清洗的洁净的Si(100)及(111)面上生成了Ni2Si,NiSi和NiSi2系列。实验表明,在真空度为110-6mmHg,温度为650℃时,化学清洗的Si表面上生成了SiC;各种镍硅化物的出现不是在某一确定温度;在Si(111)面上外延生长镍硅化物比在(100)面上容易。
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| 关 键 词： | 半导体材料 镍硅化物 TEM 原位研究 |
| 收稿时间： | 1986-08-14 |
| 修稿时间： | 1987-09-25 |
STUDY OF THE FORMATION OF NICKEL SILICIDES "IN SITU" BY TEM |
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| Gao Mingtai. STUDY OF THE FORMATION OF NICKEL SILICIDES IN SITU BY TEM[J]. Journal of Electronics & Information Technology, 1988, 10(4): 360-366. |
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| Authors: | Gao Mingtai |
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| Affiliation: | Institute of Electronics Academia Sinica Beijing |
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| Abstract: | The interface of Si-Ni produced by evaporation was annealed from room temperature to 800C and "in situ" studied by transmission electron microscopy (TEM). The formation of Ni2Si, NiSi and NiSi2 on chemically cleaned Si (100) and (111) surfaces has been investigated. On the basis of experimental results, SiC had been formed at 650C on such cleaned Si surface at 1x10-6 mmHg vaccum; the appearance of that series of nickel silicide were not at an exact temperature; and it would be easier to epitaxy silicides on Si (111) than (100) surface. |
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| Keywords: | Semiconductor material,Nickel silicide,TEM,Study " in situ |
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