首页 | 本学科首页   官方微博 | 高级检索  
     


Dielectric properties of Al mid V2O5 mid Al thin film sandwich structures
Authors:C. Venkata Ramana   O. M. Hussain   B. Srinivasulu Naidu  C. Julien  
Affiliation:a Thin Film Laboratory, Department of Physics, Sri Venkateswara University, Tirupati 517 502 India;b Laboratoire des Milieux Désordonnés et Hétérogènes, UMR-CNRS 7603, Université Pierre et Marie Curie, 4 place Jussieu, Tour 22 75252 Paris Cedex 05 France
Abstract:Vanadium pentoxide thin films were prepared by the electron beam evaporation technique onto Corning 7059 glass substrates kept at a temperature of Ts=423 K. The dielectric properties of Al V2O5 Al thin film sandwich structures were studied in the frequency range 0.1–100 kHz and in the temperature range 125–450 K. Both the dielectric constant and the dielectric loss factor were found to depend on frequency and temperature. The activation energy obtained for the dielectric relaxation process was about 0.36 eV.
Keywords:V2O5 thin films   Electron beam evaporation   Dielectric properties
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号