Dielectric properties of Al  V2O5 Al thin film sandwich structures |
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| Authors: | C. Venkata Ramana O. M. Hussain B. Srinivasulu Naidu C. Julien |
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| Affiliation: | a Thin Film Laboratory, Department of Physics, Sri Venkateswara University, Tirupati 517 502 India;b Laboratoire des Milieux Désordonnés et Hétérogènes, UMR-CNRS 7603, Université Pierre et Marie Curie, 4 place Jussieu, Tour 22 75252 Paris Cedex 05 France |
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| Abstract: | Vanadium pentoxide thin films were prepared by the electron beam evaporation technique onto Corning 7059 glass substrates kept at a temperature of Ts=423 K. The dielectric properties of Al V2O5 Al thin film sandwich structures were studied in the frequency range 0.1–100 kHz and in the temperature range 125–450 K. Both the dielectric constant and the dielectric loss factor were found to depend on frequency and temperature. The activation energy obtained for the dielectric relaxation process was about 0.36 eV. |
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| Keywords: | V2O5 thin films Electron beam evaporation Dielectric properties |
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