| A GaAs-Based MOEMS Tunable RCE Photodetector with Single Cantilever Beam |
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| 作者姓名： | Zhou Zhen Han Qin Du Yun Yang Xiaohong Wu Ronghan Huang Yongqing and Ren Xiaomin |
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| 作者单位： | 北京邮电大学电信工程学院光通信中心 北京100876
(周震，黄永清)，中国科学院半导体研究所集成光电子学联合国家重点实验室 北京100083
(韩勤，杜云，杨晓红，吴荣汉)，北京邮电大学电信工程学院光通信中心 北京100876(任晓敏) |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | A GaAs-based micro-opto-electro-mechanical-systems(MOEMS) tunable resonant cavity enhanced(RCE) photodetector with a continuous tuning range of 31nm under a 6V tuning voltage is demonstrated.The single cantilever beam structure is adopted for this MOEMS tunable RCE photodetector.The maximum and minimum peak quantum efficiency during the tuning are 36.9% and 30.8%，respectively.The maximum and minimum full-widthathalf-maximum (FWHM) are 20nm and 14nm，respectively.The dark current density is 7.46A/m2 without bias.
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| 关 键 词： | GaAs MOEMS RCE photodetector tuning single cantilever beam |
A GaAs-Based MOEMS Tunable RCE Photodetector with Single Cantilever Beam |
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| Zhou Zhen,Han Qin,Du Yun,Yang Xiaohong,Wu Ronghan,Huang Yongqing,and Ren Xiaomin.A GaAs-Based MOEMS Tunable RCE Photodetector with Single Cantilever Beam[J].Chinese Journal of Semiconductors,2005,26(6):1087-1093. |
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| Authors: | Zhou Zhen HAN Qin Du Yun Yang Xiaohong Wu Ronghan Huang Yongqing REN Xiaomin |
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| Abstract: | A GaAs-based micro-opto-electro-mechanical-systems(MOEMS) tunable resonant cavity enhanced(RCE) photodetector with a continuous tuning range of 31nm under a 6V tuning voltage is demonstrated.The single cantilever beam structure is adopted for this MOEMS tunable RCE photodetector.The maximum and minimum peak quantum efficiency during the tuning are 36.9% and 30.8%,respectively.The maximum and minimum full-width-at-half-maximum (FWHM) are 20nm and 14nm,respectively.The dark current density is 7.46A/m2 without bias. |
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| Keywords: | GaAs MOEMS RCE photodetector tuning single cantilever beam |
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