Low-temperature deposition of SiO2 films using plasma-enhanced oxygen with reduction of oxygen-originated damage |
| |
| Authors: | Jun-ichi Nishizawa Toru Kurabayashi Kyozo Kanamoto Takashi Yoshida Toru Oizumi |
| |
| Affiliation: | a Semiconductor Research Institute of Semiconductor Research Foundation, Kawauchi, Aoba-ku, Sendai 980-0868, Japan;b Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan |
| |
| Abstract: | Plasma-enhanced chemical vapor deposition of SiO2 with well-suppressed subcutaneous oxidation is demonstrated to be a promising technology for eliminating defect generation and fabricating thin gate SiO2 films by means of a totally low-temperature process. An anomalous increase in electron density was observed in Si substrates irradiated by plasma-activated oxygen during the formation of gate SiO2 films using an ultrahigh-vacuum system. The origin of this phenomenon was related to the donors generated by a high-energy species of oxygen radicals. For a deposition process, ionized oxygen may be effective but the radicals may cause plasma-enhanced oxidation with defect generation. |
| |
| Keywords: | Author Keywords: SiO2 Plasma-enhanced oxidation Plasma-enhanced chemical vapor deposition Gate dielectric Reaction mechanism Subcutaneous oxidation |
| 本文献已被 ScienceDirect 等数据库收录！ |
