高边缘击穿和扩展光谱的圆形单光子雪崩二极管（英文）

介绍了一种0. 18μm互补金属氧化物半导体(CMOS)技术的新型宽光谱荧光相关谱探测器,其为高边缘击穿、扩展光谱和低暗计数率的圆形单光子雪崩二极管(SPAD).该器件由p+/deep n-well结,p-well保护环和多晶硅保护环组成.通过Silvaco TCAD 3D器件仿真,直径为10μm的圆形p+/deep n-well SPAD器件具有较高边缘击穿特性.此外,p+/deep n-well结SPAD比p+/n-well结SPAD具有更长的波长响应和扩展光谱响应范围.该器件在0. 5 V过量偏压下,可在490~775 nm波长范围内实现超过40%的光子探测率.该圆形p+/deep n-well SPAD器件在25℃时具有较好雪崩击穿为15. 14 V,具有较低暗计数率为638 Hz.

Circular single-photon avalanche diode with high premature edge breakdown and extended spectrum

This paper presents a 0. 18 μm complementary metal-oxide-semiconductor( CMOS) technology high premature edge breakdown,extended spectrum and low dark count rate circular single-photon avalanche diode( SPAD) which together form a novel wide spectrum fluorescence correlation spectroscopy( FCS) detector. The circular device consists of a p +/deep n-well junction,a p-well guard-ring,and a poly guard-ring. Simulations on a Silvaco TCAD 3D device also show that the 10 μm-diameter circular p +/deep n-well SPAD device has high premature edge breakdown characteristics. Moreover,compared to the SPAD p +/n-well junction,the p +/deep nwell junction has a longer wavelength response and spectral expansion. The device achieves wide spectral sensitivity enabling greater than 40% photon detection probability from 490 to 775 nm wavelength at 0. 5 V excess bias. The circular p +/deep n-well SPAD has fine avalanche breakdown( 15. 14 V) and a low dark count rate of 638 Hz at 25℃.