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Electrical characterisation of CuInSe2 thin films for solar cells applications
Authors:O. Tesson   M. Morsli   A. Bonnet   V. Jousseaume   L. Cattin  G. Masse  
Affiliation:

a Université de Nantes, GPSE, Equipe des Matériaux pour l'Electronique, 2, rue de la Houssinière, BP 92208, 44322, Nantes Cedex 03, France

b Centre d'Etudes Fondamentales, Universite de Perpignan, 52, Avenue de Villeneuve, 66860, Perpignan, France

Abstract:Nearly stoichiometric large area polycrystalline CuInSe, thin films have been grown using a simple and low cost method based on close-spaced vapour transport (CSVT) in a vertical closed tube. Direct current electrical conductivity, Hall coefficient and thermoelectric power measurements have been performed as a function of the temperature in the range 80–600 K. Results are interpreted on the basis of conduction due to hopping mechanisms in an impurity band and, at high temperatures, due to diffusion mechanisms in the extended states of the valence and conduction bands.
Keywords:
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