| 深结短沟道MOS晶体管准二维阈值电压模型 |
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| 引用本文： | 周少阳,柯导明,夏丹,王保童,申静. 深结短沟道MOS晶体管准二维阈值电压模型[J]. 固体电子学研究与进展, 2013, 33(2) |
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| 作者姓名： | 周少阳 柯导明 夏丹 王保童 申静 |
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| 作者单位： | 安徽大学电子信息工程学院,合肥,230601 |
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| 基金项目： | 国家自然科学基金资助项目，2010高等学校博士学科点专项科研基金资助项目 |
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| 摘 要： | 提出了一个新的短沟道MOS晶体管表面势的准二维解析模型。不同于经典模型,该模型对沟道耗尽层横向剖分,由高斯定理导出沟道耗尽层电势的一维微分方程,方程考虑了漏、源的横向电场对沟道耗尽层厚度的影响。求解方程得到了耗尽层厚度与表面势的关系函数,由此得出了一个包含有沟道长度的阈值电压公式。通过MEDICI软件对多种不同参数的MOS晶体管进行了仿真,此模型计算结果与MEDICI仿真数据吻合较好,比电荷分享模型精度高。
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| 关 键 词： | 阈值电压 短沟道效应 表面势 金属氧化物半导体场效应晶体管 |
A Quasi-2D Threshold Voltage Model for Deep-junction and Short-channel MOSFETs |
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| ZHOU Shaoyang , KE Daoming , XIA Dan , WANG Baotong , SHEN Jing. A Quasi-2D Threshold Voltage Model for Deep-junction and Short-channel MOSFETs[J]. Research & Progress of Solid State Electronics, 2013, 33(2) |
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| Authors: | ZHOU Shaoyang KE Daoming XIA Dan WANG Baotong SHEN Jing |
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| Abstract: | A new analytical quasi-2D surface potential model for short channel MOSFET is presented in this paper.Being differ from the classic model,in this model the effects of the source and drain potential on the thickness of the depletion layer have been taken into account,an one-dimensional differential equation of the potential for the channel depletion layer is derived by applying Gauss’s law.The relationship between the surface potential and the thickness of the channel depletion layer can be obtained by solving the equation,and a new quasi-2D threshold voltage expression has been given.The accuracy of the model is verified by using the MEDICI software to simulate the MOSFET’s electronic characteristics with different parameters.Finally,calculations of the model are in good agreement on the results of simulation and more accurate than that of Charge Share Model. |
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| Keywords: | threshold voltage short channel effects surface potential MOSFET |
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