| 自旋场效应晶体管的电学特性研究(英文) |
| |
| 引用本文： | 张华鑫,王燕,王伟. 自旋场效应晶体管的电学特性研究(英文)[J]. 固体电子学研究与进展, 2013, 33(2) |
| |
| 作者姓名： | 张华鑫 王燕 王伟 |
| |
| 作者单位： | 南京邮电大学电子科学与工程学院,南京,210003 |
| |
| 基金项目： | 国家自然科学基金资助项目，江苏省自然科学基金资助项目，南京邮电大学自然科学基金资助项目 |
| |
| 摘 要： | 用非平衡格林函数方法研究一种自旋场效应晶体管的电子输运特性。结果表明,不考虑自旋散射的作用,当漏极电压比较小时该器件能达到很高的磁阻比率。对该器件在考虑自旋散射和不考虑自旋散射下的输出电流进行对比,发现在铁磁平行(反平行)的条件下,考虑自旋散射时的输出电流要比不考虑自旋散射时的输出电流小(大)。研究结果揭示了该器件的物理机制,为该器件的优化设计提供了理论指导。
|
| 关 键 词： | 自旋场效应晶体管 器件仿真 输运特性 非平衡格林函数 |
Simulation Study of the Electrical Properties of the Spin Field Effect Transistor |
| |
| ZHANG Huaxin , WANG Yan , WANG Wei. Simulation Study of the Electrical Properties of the Spin Field Effect Transistor[J]. Research & Progress of Solid State Electronics, 2013, 33(2) |
| |
| Authors: | ZHANG Huaxin WANG Yan WANG Wei |
| |
| Abstract: | The electronic transport properties of a spin field effect transistor(spinFET) is theoretically investigated by using Non-Equilibrium Green’s Function(NEGF).The results show that the device can get a very high magneto resistance(MR) ratio without spin scattering when drain voltage is small.The output current of the device without spin scattering is calculated and is compared with that of considering the effect of spin scattering.We notice that the output current in the device with spin scattering is smaller(larger) than that without spin scattering in the parallel(anti-parallel) configuration.The physical mechanism of the device is disclosed,which provides the theoretical guidance for the optimum design of the spinFET. |
| |
| Keywords: | spin field effect transistor device simulation transport properties non-equilibrium green's functions |
| 本文献已被 万方数据 等数据库收录！ |
