| 陶瓷电容器的制备工艺概述 |
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| 引用本文： | 何晓勇,张锐,王海龙,王西科. 陶瓷电容器的制备工艺概述[J]. 现代技术陶瓷, 2003, 24(4): 28-34,38 |
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| 作者姓名： | 何晓勇 张锐 王海龙 王西科 |
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| 作者单位： | 郑州大学材料工程学院,郑州,450002 |
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| 摘 要： | 简介了新型陶瓷电容器的优点、功能、类型和发展现状及表面层陶瓷电容器、表面层型陶瓷电容器和晶界型陶瓷电容器的产生机理和区别，和影响陶瓷电容器性能的诸多因素，如显微结构、掺杂元素和包覆改性等；回顾了国内外陶瓷电容器的烧成工艺发展历史，如高温一次烧成、低温一次烧成、独石法和激光辐射法等；展望了陶瓷电容器在21世纪的研究和应用前景。
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| 关 键 词： | 陶瓷电容器 显微结构 掺杂改性 包覆 烧成工艺 |
Preparation of Ceramic Capacitors |
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| He Xiaoyong Zhang Rui Wang Hailong Wang Xike. Preparation of Ceramic Capacitors[J]. Advanced Ceramics, 2003, 24(4): 28-34,38 |
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| Authors: | He Xiaoyong Zhang Rui Wang Hailong Wang Xike |
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| Abstract: | The virtues,function,types and state-of-the art of the ceramic capacitors were introduced in this paper,as well as the mechanism of the ceramic condensers and differences between GBBLC and SBBLC.It includes many factors affecting the properties,such as microstructure,doping and coation technologies.In addition,the sintering history of the ceramic capacitor,i.e.the high-temperature one-step firing process,low-temperature one-step firing process and laser irradiation techniques,was retrospected.Finally,the researching and application of the ceramic capacitors in the 21 century was discussed. |
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| Keywords: | ceramic capacitor microstructure doping coating sintering process |
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