高效硅基异质结太阳能电池的模拟

a-Si:H/c-Si异质结太阳能电池的基本参数，如层厚度、掺杂浓度、a-Si:H/c-Si界面缺陷、功函数等是影响载流子传输特性和电池效率的关键因素。在本文中，利用AFORS-HET程序，研究了这些参数与a-Si:H/c-Si电池的性能的关联性。最后，具有TCO/n-a-Si:H/i-a-Si:H/p-c-Si/p -a-Si:H/Ag结构的太阳能电池的最优化性能被获得，其光电转换效率为27.07%（VOC: 749 mV, JSC: 42.86 mA/cm2, FF: 84.33%）。深入地了解异质结电池的输运特性，对进一步提高电池的效率有很大的帮助，同时对实际太阳能电池的制造也能提供有益的指导。

Simulation of a high-efficiency silicon-based heterojunction solar cell

The basic parameters of a-Si:H/c-Si heterojunction solar cells, such as layer thickness, doping concentration, a-Si:H/c-Si interface defect density, and the work functions of the transparent conducting oxide (TCO) and back surface field (BSF) layer, are crucial factors that influence the carrier transport properties and the efficiency of the solar cells. The correlations between the carrier transport properties and these parameters and the performance of a-Si:H/c-Si heterojunction solar cells were investigated using the AFORS-HET program. Through the analysis and optimization of a TCO/n-a-Si:H/i-a-Si:H/p-c-Si/p⁺-a-Si:H/Ag solar cell, a photoelectric conversion efficiency of 27.07% (V_OC: 749 mV, J_SC: 42.86 mA/cm², FF: 84.33%) was obtained through simulation. An in-depth understanding of the transport properties can help to improve the efficiency of a-Si:H/c-Si heterojunction solar cells, and provide useful guidance for actual heterojunction with intrinsic thin layer (HIT) solar cell manufacturing.