Formation of multilayer Si3N4 structures by nitrogen ion implantation |
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Authors: | Reeson K.J. Hemment P.L.F. Peart R.F. Meekison C.D. Booker G.R. Davis J. |
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Affiliation: | University of Surrey, Department of Elecrronic & Electrical Engineering, Guildford, UK; |
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Abstract: | Buried double-layered nitride structures in single-crystal (100) silicon have been produced by the implantation of doses of 0.75 × 1018 N+ cm-2 at 350 keV and 200 keV, respectively. Observations by RBS and channelling on the structure before and after high-temperature annealing and by TEM after annealing have shown two distinct buried nitride layers of different thicknesses. The mechanisms responsible for the formation of such a structure are discussed, together with possible routes for nitrogen migration. The processing conditions to form multilayer structures which are suitable for device applications are proposed. |
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