硅和碳化硅二极管在脉冲功率源中的对比研究

碳化硅功率器件近年来发展很快，具有高击穿电压、高热导率等优点。通过仿真和实验研究了碳化硅二极管作为续流二极管应用在脉冲形成网络中的表现，并与硅二极管作对比。实验结果表明，碳化硅二极管在常温下抗浪涌电流能力不如硅二极管。在高温下两者抗浪涌电流能力均有所减弱，但硅超快恢复二极管的抗浪涌电流能力下降更多。可以预见在更高的温度下，碳化硅肖特基二极管的抗浪涌电流能力将超过硅快恢复二极管。

Comparative study of siliconand siliconcarbide diode in power pulse supply

Silicon carbide power devices have developed rapidly in recent years, and they have the advantages of high breakdown voltage and high thermal conductivity. The performance of silicon carbide diodes as freewheeling diodes in pulse forming networks is studied by simulation and experiment, and compared with silicon diodes. The experimental results show that silicon carbide diodes are less resistant to surge currents than silicon diodes at room temperature. Both of them have weakened surge current capability at high temperatures, but the ability of silicon ultrafast recovery diodes to withstand surge currents is much lower.It can be predicted that at higher temperature, the silicon carbide junction barrier Schottky diode''s surge current capability will exceed that of silicon fast recovery diodes.