衬底偏压对硅基高压器件新结构击穿电压特性的影响

提出基于衬底偏压技术的double RESURF结构，称为Sb double RESURF LDMOS。在n型衬底和n型漂移区之间嵌入p型外延层，阻挡器件阻断状态下的纵向电流通路，改变体内电场分布。衬底偏压加强漂移区电荷共享效应，降低漏极下方纵向电场峰，该技术对提高薄漂移区横向功率器件的纵向击穿电压尤其重要。结果表明，在保持较小导通电阻下，该结构较常规LDMOS击穿电压提高97%。

Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure

A novel silicon double-RESURF LDMOS structure with an improved breakdown characteristic by substrate bias technology (SB) is reported. The P-type epitaxial layer is embedded between an N-type drift region and an N-type substrate to block the conduction path in the off-state and change the distributions of the bulk electric field. The substrate bias strengthens the charge share effect of the drift region near the source, and the vertical electric field peak under the drain is decreased, which is especially helpful in improving the vertical breakdown voltage in a lateral power device with a thin drift region. The numerical results by MEDICI indicate that the breakdown voltage of the proposed device is increased by 97% compared with a conventional LDMOS, while maintaining a low on-resistance.