具有纳米凹坑氧化铟锡的LED光提取效率的提高

由于低的光提取效率，氮化镓基发光二极管的应用受到了限制。氧化铟锡—氮化镓界面的光的全反射作用是造成低的光提取效率的重要原因。人们提供了多种方法来提高光提取效率。本文揭示了一种简单并且经济的方法。通过自组装和干法刻蚀的方法制作粗化的氧化铟锡薄膜。运用原子力显微镜（AFM）对表面形态和粗糙程度进行观察。测量各个样品的I-V特性、出光功率和出光辐射图并进行对比。刻蚀之后，在ITO表面形成了圆柱体和凹坑结构，它们的高度随着刻蚀时间增大。结果显示，LED的出光功率和随着刻蚀时间的增加而增加。由于圆柱体和凹坑结构的形成以及它们深度的增加，ITO-GaN界面的光的全反射减少了。因此，出光率提高。

Light extraction efficiency enhancement in light-emitting diodes with indium tin oxide nano-craters

A simple and low cost method is described which improves extraction efficiency. The indium tin oxide (ITO) textured film was fabricated by using the self-assembly method and dry-etching. The surface morphologies and surface roughness were observed by using an atomic force microscope. The I-V characteristics, output power and polar radiation pattern of the LEDs with and without textured ITO were measured for comparison. Cylinders and craters were formed on the ITO surface after the etching, the height of which increased with etching time. The output power of the devices is proportional to the etching time. Total internal reflection of light on the ITO-GaN interface is reduced due to the appearance of cylinders and craters, and their increasing height. Thus, the output power is improved.