Conductivity compensation in p-6H-SiC in irradiation with 8-MeV protons |
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| Authors: | A. A. Lebedev V. V. Kozlovski S. V. Belov E. V. Bogdanova G. A. Oganesyan |
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| Affiliation: | 1.Ioffe Physical Technical Institute,Russian Academy of Sciences,St. Petersburg,Russia;2.St. Petersburg State Polytechnic University,St. Petersburg,Russia |
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| Abstract: | Carrier removal rate (V d ) in p-6H-SiC in its irradiation with 8-MeV protons has been studied. The p-6H-SiC samples were produced by sublimation in vacuum. V d was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that complete compensation of samples with initial value of N a − N d ≈ 1.5 × 1018 cm−3 occurs at an irradiation dose of ∼1.1 × 1016 cm−2. In this case, the carrier removal rate was ∼130 cm−1. |
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