An Organic-Based Diode–Memory Device With Rectifying Property for Crossbar Memory Array Applications

An organic-based diode–memory device that has a bistable memory function and a high rectification ratio has been studied. The diode–memory device is fabricated by incorporating an organic-based diode component in series with a polymer memory component. The organic-based diode–memory device performs well as a reliable rectifying memory device, achieving an excellent on/off current ratio of $ hbox{10}^{6}$ and a high rectification ratio of $hbox{10}^{3}$ . The conduction models are also fitted to study the proposed conductivity mechanism of the rectifying memory device. The demonstrated organic-based diode–memory device is very promising for use in a passive matrix crossbar polymer memory array.