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The effect of postgrowth annealing on the structure and optical properties of multilayer Ge/Si heterostructures |
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| Authors: | A. A. Tonkikh V. G. Talalaev N. D. Zakharov G. E. Cirlin V. M. Ustinov P. Werner |
| Affiliation: | (1) Institute of Analytical Instrument Building, Russian Academy of Sciences, St. Petersburg, Russia;(2) Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia;(3) Max Planck Institut für Mikrostrukturphysik, Halle, Germany |
| Abstract: | The effect of the postgrowth laser and thermal annealing on the structure and optical properties of multilayer heterostructures comprising quantum dots of germanium in a silicon matrix has been studied by photoluminescence (PL) and transmission electron microscopy (TEM). The PL spectra of annealed samples reveal a decrease of emission from the quantum dots and display a new emission band as compared to the initial spectra. The TEM measurements show that this effect is related to smearing of the Ge-Si interface and to the appearance of a regular rectangular network of dislocations on the surface of the annealed structure. |
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