Ion implantation doping and electrical conductivity enhancement of C60 films |
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| Authors: | Yunlong Cui Senhao Lin Tingwen Rong Jingrong Bao Jianguo Zhang |
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| Affiliation: | LNAT Laboratory, Shanghai Institute of Nuclear Research, Academia Sinica, P.O. Box 800-204, Shanghai 201800, China |
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| Abstract: | Pristine C60 films sublimed onto sheet mica were implanted with 20 keV K+ ions and I+ ions at doses of 1.0 × 1016/cm2, 3.0 × 1016/cm2 and 5.0 × 1016/cm2, and with 20 keV Ar+ ions at a dose of 5.0 × 1016/cm2. The distributions of dopants were studied using Rutherford backscattering spectrometry (RBS). The temperature dependence of sheet resistivity of the films was investigated applying a four-probe system. It was proposed that the conductivity enhancement of K+ implanted C60 films was due to the implanted ions in the films, while for I+ implanted C60 films, both implanted I+ ions and irradiation effects of the ions contributed to the enhancement of conductivity. |
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