Current-voltage characteristics of Si:As-based photodetectors with blocked hopping conductivity |
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| Authors: | D. G. Esaev S. P. Sinitsa E. V. Chernyavskii |
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| Affiliation: | (1) Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russia |
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| Abstract: | The results of an experimental investigation of the current-voltage characteristics of Si:As-based structures with blocked hopping conductivity are reported. The behavior of the dark current in the temperature range T=7–25 K with bias voltages from −4 to +4 V is analyzed and views about the mechanisms of dark-current flow are presented. Recommendations are developed for choosing the bias voltage on the structures for optimal operation as an IR photodetector. Fiz. Tekh. Poluprovodn. 33, 614–618 (May 1999) |
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