| 压阻式硅微加速度计的研制 |
| |
| 引用本文： | 张精华,田雷,迟晓珠,王伟,侯占民,吴亚林. 压阻式硅微加速度计的研制[J]. 传感器与微系统, 2003, 22(12): 40-42 |
| |
| 作者姓名： | 张精华 田雷 迟晓珠 王伟 侯占民 吴亚林 |
| |
| 作者单位： | 中国电子科技集团公司,第四十九研究所,黑龙江,哈尔滨,150001 |
| |
| 摘 要： | 介绍压阻式硅微加速度计的结构设计。采用等离子体刻蚀技术制作成硅微加速度计。该技术具有腐蚀深宽比高、掩模选择性好的特点,适用于微机械器件的制作。通过测试,加速度计的非线性达到0.2%。讨论了影响加速度计灵敏度的结构因素和工艺因素。
|
| 关 键 词： | 硅微加速度计 压阻式 MEMS 等离子体刻蚀 |
| 文章编号： | 1000-9787(2003)12-0040-03 |
| 修稿时间： | 2003-06-26 |
Development of piezoresistive silicon-micro-accelerometer |
| |
| ZHANG Jing-hua,TIAN Lei,CHI Xiao-zhu,WANG Wei,HOU Zhan-min,WU Ya-lin. Development of piezoresistive silicon-micro-accelerometer[J]. Transducer and Microsystem Technology, 2003, 22(12): 40-42 |
| |
| Authors: | ZHANG Jing-hua TIAN Lei CHI Xiao-zhu WANG Wei HOU Zhan-min WU Ya-lin |
| |
| Abstract: | Structure design of piezoresistive silicon-micro-accelerometer is introduced. Silicon-micro-accelerometer is fabricated by plasma etch technology. The characters of the technology are high aspect ratio and very high mask selectivities. The technology is applied to micro-machine fabrication. Through testing, non-linearity of the accelerometer is 0.2%. Structure factor and technology factor effecting sensitivity of the accelerometer are discussed. |
| |
| Keywords: | silicon-micro-accelerometer piezoresistive MEMS plasma etch |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
