Study of electron-beam evaporated Sn-doped In2O3 films |
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| Authors: | SMA Durrani EE Khawaja J Shirokoff MA Dams GD Khattak MA Salim MS Hussain |
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| Affiliation: | aThe Research Institute, King Fahd University of Petroleum and Minerals, Dhahran 31261, Saudi Arabia;bPhysics Department, King Fahd University of Petroleum and Minerals, Dhahran 31261, Saudi Arabia;cChemistry Department, King Fahd University of Petroleum and Minerals, Dhahran 31261, Saudi Arabia |
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| Abstract: | Electron beam evaporated Sn-doped In2O3 films have been prepared from the starting material with composition of (1 − x) In2O3 − -x SnO2, where x = 0.0, 0.010, 0.025, 0.050, 0.090, and 0.120. X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and X-ray diffraction analysis were carried out on the films. Luminous transmittance and electrical resistivity of the films, show weak dependence on x. The composition of the film (Sn]/In] atomic ratio) was found to differ from that of the starting material. In fact, the atomic ratio was higher in the film than in the starting material by a factor which increases with x (ranging from 1.0 to 2.6). There is a relatively broad resistivity minimum in the layer atomic ratio range Sn/In = 0.06 − -0.09. These results compare well with those reported in the literature for Sn-doped In2O3 films, prepared by pyrolitic (spray) method. |
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| Keywords: | Electron beam evaporation Sn-doped In2O3 films Atomic ratio Resistivity minimum |
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