The Use of Transition-Metal Silicides to Reduce the Contact Resistance Between the Electrode and Sintered n-Type Mg2Si

The electrical and thermoelectric characteristics of n-type Mg₂Si equipped with electrodes of Ni and the transition-metal silicides CoSi₂, CrSi₂, TiSi₂, and NiSi were examined. To form the electrodes on the Mg₂Si matrix, a monobloc sintering method, i.e., simultaneous sintering of the electrode material during Mg₂Si sintering, was used. To obtain dense electrodes and to keep an appropriately low sintering temperature for the Mg₂Si matrix, a Ni binder was used for the CoSi₂, CrSi₂, and TiSi₂ monobloc sintering. The mixture ratio between the transition-metal silicide and the Ni was 50:50 in wt.%. The room-temperature I?CV characteristics of the fabricated CoSi₂, CrSi₂, and TiSi₂ electrodes with the Ni binder and NiSi electrodes were considered to be adequate for practical applications in as much as ohmic contacts were obtained. The contact resistance at the Mg₂Si/electrode interface decreased by 35% and 28%, respectively, for the CoSi₂ and CrSi₂ electrodes compared with our standard Ni electrode. The thermoelectric power output was measured at the practical operating temperature of 600?K, with ??T?=?500?K. The observed output powers for 3.0?mm?×?3.0?mm?×?7.5?mm samples equipped with CoSi₂, CrSi₂, and NiSi electrodes were 153?mW, 149?mW, and 125?mW, respectively, representing increases of 27%, 24%, and 4%, respectively, compared with the 120?mW measured for the sample with Ni electrodes.