Electric field and charge distribution imaging with sub-micron resolution in an organic Thin-Film Transistor |
| |
Authors: | Calogero Sciascia Michele Celebrano Guglielmo Lanzani |
| |
Affiliation: | a CNST IIT@Politecnico di Milano, via Pascoli 70/3, 20133 Milano, Italy b Physics Department, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, Italy c Electronics Department, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano, Italy d Madrid Institute for Advanced Studies (IMDEA) in Nanoscience, Facultad de Ciencias, Av. Tomas y Valiente 7, Cantoblanco, 28049 Madrid, Spain |
| |
Abstract: | Here we show how Stark spectroscopy, coupled with confocal microscopy, is able to directly map the electric field in an n-type Copper-Fluorinated Phthalocyanine Thin-Film Transistor (TFT) under different operating conditions. To this extent, we locally probe Electro-Reflectance, with a nominal spatial resolution better than 500 nm, exploiting the fact that the detected signal is directly proportional to the square of the local field on the probe volume. This electric field imaging technique has unique advantages because it is non-invasive, since it exploits low incident power and because it probes the existing field in the bulk rather than the surface. Combining the experimental data with numerical modeling, it is possible not only to reconstruct the space charge profile in the few-nanometer thick accumulation layer, but also to extract the AC electron mobility. |
| |
Keywords: | Electro-Reflectance Stark shift spectroscopy Confocal microscopy Copper-Fluorinated Phthalocyanine Mapping Thin-Film Transistor |
本文献已被 ScienceDirect 等数据库收录! |
|