Performance comparison of pentacene organic field-effect transistors with SiO2 modified with octyltrichlorosilane or octadecyltrichlorosilane |
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| Authors: | Shree Prakash TiwariKeith A. Knauer Amir DindarBernard Kippelen |
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| Affiliation: | Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, United States |
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| Abstract: | Performance of pentacene organic field-effect transistors (OFETs) is significantly improved by treatment of SiO2 with octyltrichlorosilane (OTS-8) compared to octadecyltrichlorosilane (OTS-18). The average hole mobility in these OFETs is increased from 0.4 to 0.8 cm2/Vs when treating the dielectric with OTS-8 versus OTS-18 treated devices. The atomic force microscope (AFM) images show that the OTS-8 treated surface produces much larger grains of pentacene (∼500 nm) compared to OTS-18 (∼100 nm). X-ray diffraction (XRD) results confirmed that the pentacene on OTS-8 is more crystalline compared to the pentacene on OTS-18, resulting in higher hole mobility. |
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| Keywords: | Organic field-effect transistors (OFETs) Pentacene Mobility Surface treatment |
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