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Mapping the built-in electric field in polymer light-emitting electrochemical cells
Authors:Yufeng HuBryce Dorin  Feng TengJun Gao
Affiliation:a Department of Physics, Queen’s University, Kingston, Ontario, Canada K7L 3N6
b Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China
Abstract:A millimeter planar polymer light-emitting electrochemical cell was turned on in a cryogenic probe station and subsequently cooled to freeze the doping profile. A 442 nm laser beam guided by an optical fiber was scanned across the interelectrode gap of several millimeters and the photovoltaic response was measured as a function of position. Both photocurrent and photovoltage profiles display a prominent peak at the geometric boundary of the p- and n-doped regions. A non-zero photovoltaic response throughout the p- and n-doped regions can be explained by various broadening mechanisms including non-uniform doping and secondary excitation by waveguided light. The photovoltaic response is weakest at the electrode/polymer interfaces.
Keywords:Polymer light-emitting electrochemical cells   p-n Junction   Built-in electric field   Electrochemical doping
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