Improving the RF performance of 0.18 μm CMOS with deep n-wellimplantation |
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Authors: | Jiong-Guang Su Heng-Ming Hsu Shyh-Chyi Wong Chun-Yen Chang Tiao-Yuan Huang Jack Yuan-Chen Sun |
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Affiliation: | Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu ; |
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Abstract: | The radio-frequency (RF) figures of merit of 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology are investigated by evaluating the unity-current-gain cutoff frequency (F t) and maximum oscillation frequency (Fmax). The device fabricated with an added deep n-well structure is shown to greatly enhance both the cutoff frequency and the maximum oscillation frequency, with negligible DC disturbance. Specifically, an 18% increase in Ft and 25% increase in Fmax are achieved. Since the deep n-well implant can be easily adopted in a standard CMOS process, the approach appears to be very promising for future CMOS RF applications |
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