Layout Dependent Matching Analysis of CMOS Circuits

Layout has strong influence on matching properties of a circuit. Current matching models, which characterize both local random non-uniformities and global systematic non-uniformities stochastically, are not adequate for the matching analysis taking the effect of layout realization into account. In order to consider topological information of layout into matching analysis, we propose a matching model which treats the random and systematic components separately. Also, we characterize the micro-loading effect, which modulates fabricated line-width according to the local density of layout patterns, into matching analysis. With these two techniques, we can perform matching analysis of CMOS circuits taking layout information into account.