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Luminescence of Cr-doped ZnGa2O4 thin films deposited by pulsed laser ablation
Authors:Qiang Shi  Changzheng Wang  Dong ZhangShuhong Li  Liming ZhangWenjun Wang  Junying Zhang
Affiliation:
  • a School of Physics Science and Information Engineering, Liaocheng University, Shandong 252059, PR China
  • b Institute of Nonferrous Metal Research, Liaocheng University, Shandong 252059, PR China
  • c Department of Physics, Beihang University, Beijing 100191, PR China
  • Abstract:Chromium-doped zinc gallate powder is synthesized via a solid-state reaction and subsequently deposited as a thin film on quartz substrates by using a pulsed laser deposition technique under two different deposition conditions. The films are characterized with X-ray diffraction, scanning electron microscopy, UV-vis spectrophotometry and luminescent measurements. As the oxygen pressure is changed from 0 to 1 Pa, we find that the grain size gets smaller, the crystallinity improves, the band-gap energy increases, the excitation peaks of the charge transfer band exhibit a remarkable blue-shift from 263 to 247 nm and the intensity of the red emission (694 nm) is enhanced. The results suggest that the structural and luminescent properties of ZnGa2O4:Cr3 + thin film phosphors are improved by deposition at an oxygen pressure of 1 Pa.
    Keywords:Chromium doping   Zinc gallium oxide   Thin films   Luminescence   Pulsed laser deposition
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