| LP-MOCVD生长InGaAlP外延层In组分控制的动力学分析 |
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| 引用本文： | 文尚胜,范广涵,廖常俊,刘颂豪. LP-MOCVD生长InGaAlP外延层In组分控制的动力学分析[J]. 量子电子学报, 2001, 18(2) |
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| 作者姓名： | 文尚胜 范广涵 廖常俊 刘颂豪 |
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| 作者单位： | 1. 华南理工大学应用物理系；华南师范大学MOCVD实验室,
2. 华南师范大学MOCVD实验室, |
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| 摘 要： | 本文分析了低压转盘ＭＯＣＶＤ生长室中气流的流动特征，首次提出了在高温（７００℃左右）下生长ＩｎＧａＡｌＰ外延层时，抑制Ｉｎ组分脱吸附的“动压力模型”．解释了托盘转速和生长压力等生长参数对Ｉｎ组分控制的影响．
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| 关 键 词： | 低压有机金属化学气相外延 InGaAlP 动压力 In组分 |
Dynamical Analysis for the Control of In Composition in LP-MOCVD Growth of InGaAlP |
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| Wen Shangsheng,Fan Guanghan,Liao Changjun,Liu Songhao. Dynamical Analysis for the Control of In Composition in LP-MOCVD Growth of InGaAlP[J]. Chinese Journal of Quantum Electronics, 2001, 18(2) |
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| Authors: | Wen Shangsheng Fan Guanghan Liao Changjun Liu Songhao |
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| Abstract: | The dynamical characteristics of the gas flow in Turbo-Disk LP-MOCVD chamber is analysed. The dynamical pressure model of suppressing In desorption during InGaAlP epitaxial layer grown by LP-MOCVD at high growth temperature around 700 ℃ is presented. The effects of the growth parameters such as the disk speed and the reaction pressure on In composition in InGaAlP epitaxial layers are explained based on our model. |
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| Keywords: | LP-MOCVD InGaAlP the dynamical pressure In composition |
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