Passivating gallium arsenide surface by gallium chalcogenide |
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| Authors: | N. N. Bezryadin G. I. Kotov S. V. Kuzubov I. N. Arsent’ev I. S. Tarasov A. A. Starodubtsev A. B. Sysoev |
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| Affiliation: | 1.Voronezh State Technical Academy,Voronezh,Russia;2.Ioffe Physicotechnical Institute,Russian Academy of Sciences,St. Petersburg,Russia |
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| Abstract: | We have studied the protective properties of thin films of gallium selenide formed by the method of heterovalent substitution on the surface of GaAs substrates. The data of transmission (Hitachi H-800) and scanning (JEOL JSM-638 OLV) electron microscopy showed that GaAs substrates treated with selenium vapor produced a more pronounced orienting action on the subsequent deposition of GaAs as compared to the substrates covered with a natural oxide. The processing of a GaAs substrate in selenium vapor followed by the removal of the resulting Ga2Se3 layer increases the degree of smoothness of the substrate surface on the atomic level. |
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