Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy |
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| Authors: | Young-Woo Ok Chel-Jong Choi Tae-Yeon Seong K Uesugi I Suemune |
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| Affiliation: | (1) Department of Materials Science and Engineering, Kwangju Institute of Science and Technology (K-JIST), 506-712 Kwangju, Korea;(2) Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, 060-0812 Sapporo, Japan |
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| Abstract: | Detailed transmission electron microscopy (TEM) and transmission electron diffraction (TED) examination has been made of metalorganic
molecular beam epitaxial GaAsN layers grown on (001) GaAs substrates. TEM results show that lateral composition modulation
occurs in the GaAs1−xNx layer (x 6.75%). It is shown that increasing N composition and Se (dopant) concentration leads to poor crystallinity. It
is also shown that the addition of Se increases N composition. Atomic force microscopy (AFM) results show that the surfaces
of the samples experience a morphological change from faceting to islanding, as the N composition and Se concentration increase.
Based on the TEM and AFM results, a simple model is given to explain the formation of the lateral composition modulation. |
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| Keywords: | GaAsN transmission electron microscopy (TEM) metalorganic molecular beam epitaxy (MOMBE) atomic force microscopy (AFM) doping |
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