Effect of process conditions on uniformity of velocity and wear distance of pad and wafer during chemical mechanical planarization |
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Authors: | Hyoungjae Kim Haedo Jeong |
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Affiliation: | (1) Precision and Mechanical Engineering, Pusan National University, San30 Changjeon-dong Keumjung-ku, 609-735 Pusan, Korea;(2) ERC/NSDM, Pusan National University, Korea |
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Abstract: | The kinematics of conventional, rotary chemical mechanical planarization (CMP) was analyzed, and its effect on polishing results was assessed. The authors define a novel parameter, ζ, as a “kinematic number,” which includes the effects of wafer size, distance between rotation centers, and rotation ratio between wafer and pad. The analysis result suggests that velocity distribution, direction of friction force, uniformity of velocity distribution, distribution of sliding distance, and uniformity of sliding-distance distribution could be consistently expressed in terms of the kinematic number ζ. These results become more important as the wafer size increases and the requirement of within-wafer nonuniformity is more stringent. |
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Keywords: | Chemical mechanical planarization (CMP) kinematic analysis velocity profile sliding distance uniformity of pad wear |
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