1.3 mu m GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well (BH-GRIN-SC-MQW) lasers entirely grown by metalorganic chemical vapour deposition (MOCVD) |
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| Authors: | Kasukawa A. Imajo Y. Makino T. |
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| Affiliation: | Furukawa Electr. Co. Ltd., Yokohama, Japan; |
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| Abstract: | Reports the first successful demonstration of a 1.3 mu m GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well laser (BH-GRIN-SC-MQW LD) entirely grown by three-step low pressure metal-organic chemical vapour deposition (LP-MOCVD). The threshold current and the differential quantum efficiency were 31 mA (threshold current density 3.4 kA/cm/sup 2/) and 28%/facet, respectively. A characteristic temperature of 65 K was obtained.<> |
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