Semiconducting properties of thermal scales grown on a chromia-forming alloy under controlled oxygen partial pressures |
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| Affiliation: | 1. Département Science des Matériaux, Université des Sciences et de Technologie Houari Boumediene, Algeria;2. SIMaP, University of Grenoble, France;3. IJL, University of Lorraine, France;1. State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi''an 710072, PR China;2. Beijing Institute of Aeronautical Materials, Beijing 100095, PR China;1. Shenzhen Key Laboratory of Advanced Manufacturing Technology for Mold & Die, Shenzhen University, Nanhai Avenue 3688, Shenzhen 518060, Guangdong, PR China;2. Guangdong Key Laboratory of Advanced Optical and Precision Manufacturing Technology, Shenzhen University, Nanhai Avenue 3688, Shenzhen 518060, Guangdong, PR China |
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| Abstract: | The present work is focused on the oxidation at 1050 °C of a model chromia-forming alloy, paying special attention to the control of the oxygen partial pressure. Taking benefit of a recently developed approach to describe and fit photocurrent energy spectra, photoelectrochemical characterizations allowed to reveal the presence, in the scale formed at low P(O2) (10−15 atm), of an unexpected high number of oxide phases. This result underlines the complexity of the scale in term of chemical composition as well as of the semiconducting types of the individual phases. |
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| Keywords: | A. Alloy C. High temperature corrosion |
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