Hysteretic properties of Mn-doped Pb(Zr,Ti)O3 thin films |
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| Affiliation: | 1. Department of Electronic Materials Engineering, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul, 01897, Republic of Korea;2. Department of Materials Science and Engineering, Incheon National University, Incheon, 22012, South Korea;3. Production Development Headquarter, Winner Technology, 581-17 Geumgok-ri, Anjung-eup, Pyeongtaek-si, Gyeonggi-do, Republic of Korea;4. Department of Chemical Engineering, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul, 01897, Republic of Korea;5. Global Campus, Gachon University, Kyeonggi-do, 13120, Republic of Korea;6. Material Technology Center, Korea Testing Laboratory, 87 Digitalro 26-gil, Guro-gu, Seoul, 152-718, Republic of Korea;1. Energy and Materials Laboratory, Higher School of Science and Technology Hammam Sousse, University of Sousse, Sousse, 4054, Tunisia;2. Faculty of Sciences, University of Monastir, Monastir, 5000, Tunisia;3. Quantum Physics Laboratory, Faculty of Sciences, University of Monastir, Monastir, 5000, Tunisia;1. Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA 94035, USA;2. Universities Space Research Association, NASA Ames Research Center, Moffett Field, CA 94035, USA;3. Department of Mechanical Engineering, Lamar University, Beaumont, TX 77705, USA;1. Department of Physics, National College, Trichy 620 001, India;2. Department of Physics, St. Philomena’s College, Mysore 570 015, India;3. Department of Physics, Stella Maris College, Chennai 600 086, India |
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| Abstract: | Pb(Zr,Ti)O3 (PZT 30/70) and Mn-doped Pb(Zr,Ti)O3 (PMZT 30/70) thin films have been fabricated on Pt/Ti/SiO2/Si substrates by a chemical solution deposition technique. The experiments found that the addition of Mn in PZT thin films greatly improves the ferroelectric properties of thin films. It is demonstrated that the Mn-doped (1 mol%) PZT showed fatigue-free characteristics at least up to 1010 switching bipolar pulse cycles under 10 V and excellent retention properties. The Mn-doped PZT thin films also exhibited well-defined hysteresis loops with a remnant polarization (Pr) of 34 μC/cm2 and a coercive field (Ec) of 100 kV/cm for the thickness of 300 nm. Dielectric constant and loss (tanδ) for Mn doped PZT thin films are 214 and 0.008, respectively. These figures compare well with or exceed the values reported previously. In this paper, the mechanism by which Mn influences on the ferroelectric properties of PZT thin films has also been discussed. |
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