The influence of nitrogen on the dielectric constant and surface hardness in diamond-like carbon (DLC) films

In this work a carbon target was sputtered by a methane/argon/nitrogen plasma in order to produce nitrogenated diamond-like carbon films (a-C:H:N). As the N₂ content in the sputtering gas was increased, the deposition rate increased markedly. Rutherford backscattering spectrometry (RBS) was used to investigate the chemical composition of the films. This nitrogen incorporation modifies the chemical bonding structure of the films, as shown by the analysis of the Raman spectra, including the occurrence of two extra peaks at approximately 2200 and 690 cm⁻¹. Electrical properties were measured through capacitance–voltage (C–V) curves. The hardness of the films decreased with the N content as shown by measurements performed by indentation method. A correlation among the Raman studies, the N content in the films, the dielectric constant and the surface hardness is presented.