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Raman scattering,AFM and nanoindentation characterisation of diamond films obtained by hot filament CVD
Affiliation:3. Department of Chemistry, University of Parma, Parco Area delle Scienze, 17/A, 43124 Parma, Italy;1. Gemological Institute of America, Carlsbad, CA, United States;2. Gemological Institute of America, New York City, NY, United States
Abstract:In this work, structure and mechanical properties of diamond films fabricated by HFCVD on silicon substrates with nanodiamond seeding were investigated. Raman spectroscopy was used to characterise the diamond phase content, crystalline quality and source of stresses in these films. Topography, hardness and Young's modulus were studied by scanning force microscopy (SFM) and nanoindentation methods. It has been ascertained that for the diamond films grown on silicon substrates with nanodiamond seeding hardness and crystalline quality is higher than for films on scratched silicon. The diamond films demonstrate Raman upshift with respect to natural diamond, indicating presence of internal compressive stress. It was shown that various types of impurities and defects induce compressive stresses in the diamond grains.
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