首页 | 本学科首页   官方微博 | 高级检索  
     

Co掺杂对Ba0.6Sr0.4TiO3薄膜介电性能的影响
引用本文:印志强,孙小华,陈章红,李美亚,赵兴中.Co掺杂对Ba0.6Sr0.4TiO3薄膜介电性能的影响[J].功能材料,2006,37(10):1557-1560.
作者姓名:印志强  孙小华  陈章红  李美亚  赵兴中
作者单位:1. 武汉大学,物理学院,纳米科技中心,湖北,武汉,430072;绥化学院,物理系,黑龙江,绥化,152000
2. 武汉大学,物理学院,纳米科技中心,湖北,武汉,430072
摘    要:利用溶胶凝胶工艺在Pt/TiO2/SiO2/Si衬底上制备了Co掺杂量为0~10%(摩尔分数)的(Ba0.6Sr0.4) Ti1-xCoxO3薄膜.研究了薄膜的结构、表面形貌、介电性能与Co掺杂量的关系.薄膜的介电损耗随着Co含量的增加而减少,在摩尔含量10%时达到最小值0.0128.FOM值在摩尔含量为2.5%达到最大值20,它的介电常数、介电损耗和调谐量分别为639.42、0.0218、43.6%.

关 键 词:BSTC薄膜  溶胶-凝胶  介电特性  调谐性  品质因子FOM
文章编号:1001-9731(2006)10-1557-04
收稿时间:2006-03-15
修稿时间:2006-07-28

The influence of Co doping on the dielectric properties of Ba0.6Sr0.4TiO3 thin films
YIN Zhi-qiang,SUN Xiao-hua,CHEN Zhang-hong,LI Mei-ya,ZHAO Xing-zhong.The influence of Co doping on the dielectric properties of Ba0.6Sr0.4TiO3 thin films[J].Journal of Functional Materials,2006,37(10):1557-1560.
Authors:YIN Zhi-qiang  SUN Xiao-hua  CHEN Zhang-hong  LI Mei-ya  ZHAO Xing-zhong
Affiliation:1. Department of Physics,Center of Nanoscience and Nanotechnology, Wuhan University, Wuhan 430072, China 2. Department of Physics,Suihua College, Suihua 152000,China
Abstract:(Ba_(0.6)Sr_(0.4))Ti_(1-x)Co_xO_3(BSTC) thin films doped Co from 0 to 10mol% were fabricated by sol-gel method on Pt/TiO_2/SiO_2/Si substrate.The structic,surface morphology and dielectric properties of BSTC thin films were investigated as a function of Co dopant concentration.The dielectric loss of the films decreased with increasing Co content.The loss factor of the 10mol% Co doped(Ba_(0.6)Sr_(0.4))Ti_(1-x)Co_xO_3 thin film showed the lowest value of 0.0128.The figure of merit(FOM) reached a maximum value of 20 at a 2.5mol% Co doped BSTC thin films.The dielectric constant,loss factor,and tunability of the 2.5mol% Co-doped(Ba_(0.6)Sr_(0.4))Ti_(1-x)Co_xO_3 thin films were 639.42,0.0218,and 43.6%,respectively.
Keywords:BSTC thin films  sol-gel  dielectric properties  tunability  figure of merit(FOM)
本文献已被 CNKI 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号