| ZnO纳米棒掺杂液晶的阈值电压现象 |
| |
| 引用本文： | 郭玉冰,陈涌海,项颖,曲胜春. ZnO纳米棒掺杂液晶的阈值电压现象[J]. 半导体学报, 2011, 32(10): 102003-3 |
| |
| 作者姓名： | 郭玉冰 陈涌海 项颖 曲胜春 |
| |
| 作者单位： | 中国科学院半导体研究所材料重点实验室,中国科学院半导体研究所材料重点实验室,广东工业大学信息工程学院,中国科学院半导体研究所材料重点实验室 |
| |
| 基金项目： | Project supported by the National Natural Science Foundation of China (Nos. 60625402, 60990313, 11074054, 10674033) and the State Key Development Program for Basic Research of China (Nos. 2006CB604908, 2006CB921607). |
| |
| 摘 要： | 采用ZnO纳米棒在单侧PVA层掺杂，我们在不同方向的直流电压下测到了液晶盒不同的阈值电压。实验中采用的ZnO纳米棒长度和直径分别大约为180nm和20nm。当ZnO掺杂在靠近正极一侧时，液晶盒阈值电压与不掺杂时相比升高；当ZnO掺杂在负极一侧时，液晶盒阈值电压与不掺杂时相比降低。上述实验结果可以由内建电场模型解释。另外，我们在低频交流电压下还观察到了一种共振现象。
|
| 关 键 词： | 掺杂液晶 阈值电压 纳米棒 ZnO 单元 行为 PVA 直流电压 |
| 修稿时间： | 2011-05-15 |
Voltage threshold behaviors of ZnO nanorod doped liquid crystal cell |
| |
| Guo Yubing,Chen Yonghai,Xiang Ying and Qu Shengchun. Voltage threshold behaviors of ZnO nanorod doped liquid crystal cell[J]. Chinese Journal of Semiconductors, 2011, 32(10): 102003-3 |
| |
| Authors: | Guo Yubing Chen Yonghai Xiang Ying Qu Shengchun |
| |
| Affiliation: | Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;School of Information Engineering, Guangdong University of Technology, Guangzhou 510006, China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
| |
| Abstract: | With ZnO nanorods doped in only one poly (vinyl alcohol) (PVA) layer, we observed different threshold voltages with reverse DC voltages for a liquid crystal cell. The length and diameter of the ZnO nanorod used in our experiment were about 180 nm and 20 nm, respectively. When the PVA layer on the anodic side was doped, the threshold voltage was larger than that of the pure cell; conversely, when the PVA layer on the cathodic side was doped, the threshold voltage was smaller than that of the pure cell. These results can be explained by the internal electric field model. We also observed a resonance phenomenon with a low frequency AC voltage. |
| |
| Keywords: | ZnO nanorods liquid crystal voltage threshold |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
