| CMOS工艺实现的高性能串联耦合正交振荡器 |
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| 引用本文： | 蔡力,黄鲁,应雨桐,傅忠谦,王卫东.CMOS工艺实现的高性能串联耦合正交振荡器[J].半导体学报,2011,32(11):115004-6. |
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| 作者姓名： | 蔡力 黄鲁 应雨桐 傅忠谦 王卫东 |
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| 作者单位： | 中国科学技术大学电子信息工程,中国科学技术大学电子科学与技术系 |
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| 摘 要： | 本文提出了一个高性能的正交振荡器。该振荡器采用具有顶层厚金属的SMIC CMOS 0.18um工艺实现。采用cascode串联耦合来产生正交信号。对NMOS差分对管引入源级退化电容来抑制其1/f噪声转化为振荡器的近端相位噪声。并最终采用专用的低噪声，高电源抑制能力的LDO来供电。正交振荡器测试显示4.78GHz信号输出时1MHz频偏处相位噪声－123.3dBc/Hz.频率范围为4.09GHz到4.87GHz，17.5%的调谐范围。调谐增益在44.5MHz/V至66.7MHz/V之间。核心芯片面积不包含pad和ESD保护电路的为0.41mm2。
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| 关 键 词： | CMOS技术 性能 ESD保护电路 相位噪声 耦合 设计 电源抑制 载波频率偏移 |
| 修稿时间： | 6/1/2011 11:57:58 AM |
High performance QVCO design with series coupling in CMOS technology |
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| Cai Li,Huang Lu,Ying Yutong,Fu Zhongqian and Wang Weidong.High performance QVCO design with series coupling in CMOS technology[J].Chinese Journal of Semiconductors,2011,32(11):115004-6. |
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| Authors: | Cai Li Huang Lu Ying Yutong Fu Zhongqian and Wang Weidong |
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| Affiliation: | Department of Electronics Engineering and Information Science, University of Science and Technology of China, Hefei 230027, China;Department of Electronic Science and Technology, University of Science and Technology of China, Hefei 230027, China;Department of Electronic Science and Technology, University of Science and Technology of China, Hefei 230027, China;Department of Electronic Science and Technology, University of Science and Technology of China, Hefei 230027, China;Department of Electronics Engineering and Information Science, University of Science and Technology of China, Hefei 230027, China |
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| Abstract: | |
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| Keywords: | QVCO CMOS 1/f noise phase noise series coupling |
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