| 埋栅结构双极型静电感应晶体管动态特性的改善 |
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| 引用本文： | 王永顺,冯晶晶,刘春娟,汪再兴,张彩珍,常鹏.埋栅结构双极型静电感应晶体管动态特性的改善[J].半导体学报,2011,32(11):114005-5. |
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| 作者姓名： | 王永顺 冯晶晶 刘春娟 汪再兴 张彩珍 常鹏 |
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| 作者单位： | 兰州交通大学,兰州交通大学,兰州交通大学 |
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| 基金项目： | 甘肃省科技支撑计划项目 |
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| 摘 要： | 双极型静电感应晶体管(BSIT)的失效经常出现在阻断态与导通态之间的瞬态过渡过程。因此,研究BSIT的开关动态过程的物理机理对于设计和制造高性能器件有着重要意义。本文深入研究了埋栅结构电力BSIT瞬态过程的动态特性,讨论了材料、几何结构与工艺参数对BSIT动态性能的影响。提出了一系列改善BSIT动态特性的工艺措施。
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| 关 键 词： | 静电感应晶体管 栅结构 双极型 动态性能 动力学特征 功率 物理机制 瞬态过程 |
| 收稿时间： | 4/25/2011 3:34:17 PM |
Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure |
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| Wang Yongshun,Feng Jingjing,Liu Chunjuan,Wang Zaixing,Zhang Caizhen and Chang Peng.Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure[J].Chinese Journal of Semiconductors,2011,32(11):114005-5. |
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| Authors: | Wang Yongshun Feng Jingjing Liu Chunjuan Wang Zaixing Zhang Caizhen and Chang Peng |
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| Affiliation: | School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China;School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China;School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China;School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China;School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China;School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China |
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| Abstract: | The failure of a bipolar static induction transistor (BSIT) often occurs in the transient process between the conducting-state and the blocking-state, so a profound understanding of the physical mechanism of the switching process is of significance for designing and fabricating perfect devices. The dynamical characteristics of the transient process between conducting-state and blocking-state BSITs are represented in detail in this paper. The influences of material, structural and technological parameters on the dynamical performances of BSITs are discussed. The mechanism underlying the transient conversion process is analyzed in depth. The technological approaches are developed to improve the dynamical characteristics of BSITs. |
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| Keywords: | bipolar static induction transistor dynamical parameters transient processes potential barrier power consumption |
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