A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs |
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Authors: | Sanjoy De Saptarsi Ghosh N Basanta Singh A K De Subir Kumar Sarkar |
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Affiliation: | Department of Electronics & Telecommunication Engineering, Jadavpur University, Kolkata-700032, India;Department of Electronics & Telecommunication Engineering, Jadavpur University, Kolkata-700032, India;Department of Electronics & Communication Engineering, Manipur Institute of Technology, Imphal-795004, India;Department of Electronics & Communication Engineering, National Institute of Technology, Durgapur-713209, India;Department of Electronics & Telecommunication Engineering, Jadavpur University, Kolkata-700032, India |
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Abstract: | A generalized threshold voltage model based on two-dimensional Poisson analysis has been developed for SOI/SON MOSFETs. Different short channel field effects, such as fringing fields, junction-induced lateral fields and substrate fields, are carefully investigated, and the related drain-induced barrier-lowering effects are incorporated in the analytical threshold voltage model. Through analytical model-based simulation, the threshold voltage roll-off and subthreshold slope for both structures are compared for different operational and structural parameter variations. Results of analytical simulation are compared with the results of the ATLAS 2D physics-based simulator for verification of the analytical model. The performance of an SON MOSFET is found to be significantly different from a conventional SOI MOSFET. The short channel effects are found to be reduced in an SON, thereby resulting in a lower threshold voltage roll-off and a smaller subthreshold slope. This type of analysis is quite useful to figure out the performance improvement of SON over SOI structures for next generation short channel MOS devices. |
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Keywords: | silicon-on-insulator silicon-on-nothing Poisson's equation short channel effects threshold voltage roll-off subthreshold slope |
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