| 插入n-AlGaN/GaN超晶格改善GaN基LED的droop效应 |
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| 引用本文： | 纪攀峰,刘乃鑫,魏同波,刘喆,路红喜,王军喜,李晋闽. 插入n-AlGaN/GaN超晶格改善GaN基LED的droop效应[J]. 半导体学报, 2011, 32(11): 114006-4 |
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| 作者姓名： | 纪攀峰 刘乃鑫 魏同波 刘喆 路红喜 王军喜 李晋闽 |
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| 作者单位： | 中国科学院半导体研究所半导体照明研发中心 |
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| 基金项目： | 国家高技术研究发展计划（863计划） |
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| 摘 要： | 在GaN基LED的n-GaN和InGaN/GaN发光区之间插入n-AlGaN/GaN超晶格来改善其droop效应。注入电流低于100mA时,插入n-AlGaN/GaN超晶格的LED的流明效率低于没有插入层的LED。注入电流高于100mA时,插入n-AlGaN/GaN超晶格的LED的流明效率高于没有插入层的LED。插入n-AlGaN/GaN超晶格后,GaN基LED在-5V的反向电压下,漏电由2.568029μA减少到0.070543μA。人体模式下,插入n-AlGaN/GaN超晶格的LED在2000V的静电电压下的通过率从60%提高到了90%。LED droop效应的改善是因为n-AlGaN/GaN超晶格过滤了穿透位错并改善了电流扩展能力。
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| 关 键 词： | 氮化镓发光二极管 AlGaN 超晶格 下垂 插入层 LED 注入电流 InGaN |
| 收稿时间： | 2011-05-12 |
| 修稿时间： | 2011-05-31 |
Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer |
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| Ji Panfeng,Liu Naixin,Wei Tongbo,Liu Zhe,Lu Hongxi,Wang Junxi and Li Jinmin. Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer[J]. Chinese Journal of Semiconductors, 2011, 32(11): 114006-4 |
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| Authors: | Ji Panfeng Liu Naixin Wei Tongbo Liu Zhe Lu Hongxi Wang Junxi Li Jinmin |
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| Affiliation: | Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Semiconductor Lighting R&D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | |
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| Keywords: | n-AlGaN/GaN superlattices wall plng efficiency droop reverse current |
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